Why and How New Japan Radio Has Continued GaAs RFIC Manufacturing in Japan; Introduction of Unique Proven Technology Based on Hetero-Junction FET Process

被引：2

作者：

Yamaga, Shigeki ^{[1
]}

Yoshinaga, Hiroyuki ^{[1
]}

Miyakoshi, Kaoru ^{[1
]}

Takahashi, Masaru ^{[1
]}

机构：

[1] New Japan Radio Co Ltd, Wireless Commun Device Div, Saitama 3568510, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2018年 / 31卷 / 04期

关键词：

GaAs HJFET; PHEMT; RF-front end; low noise amplifiers; switch;

D O I：

10.1109/TSM.2018.2864973

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the history of New Japan Radio Co. Ltd., (NJR) and our continuing presence in the business of manufacturing gallium arsenide radio frequency (GaAs RF) front-end devices. We also explain how our company survived and prospered despite the changing markets. We compare NJR strategies with those of competing RF integrated circuit (RFIC) manufacturers in Japan and briefly describe the hetero-junction field-effect transistor technology, which plays a key role in the success of NJR's RFIC business. We present some of the manufacturing and performance data to show how we improved the wafer process. These unique underlying technologies have enabled the implementation of unique circuit types, which are rarely seen in conventional GaAs ICs.

引用

页码：432 / 439

页数：8