Doped Graphene as Tunable Electron-Phonon Coupling Material

被引：80

作者：

Attaccalite, Claudio ^{[1
,2
,3
]}

Wirtz, Ludger ^{[4
,5
]}

Lazzeri, Michele ^{[6
,7
]}

Mauri, Francesco ^{[6
,7
]}

Rubio, Angel ^{[1
,2
,3
,8
]}

机构：

[1] Univ Basque Country, Dpto Fis Mat, CSIC UPV EHU MPC, Ctr Fis Mat,Nanobio Spect Grp, E-20018 San Sebastian, Spain

[2] Univ Basque Country, Dpto Fis Mat, CSIC UPV EHU MPC, Ctr Fis Mat,ETSF Sci Dev Ctr, E-20018 San Sebastian, Spain

[3] DIP, E-20018 San Sebastian, Spain

[4] UJF, CNRS, Inst Neel, Grenoble, France

[5] CNRS, Inst Elect Microelect & Nanotechnol, Dept ISEN, UMR 8520, F-59652 Villeneuve Dascq, France

[6] Univ Paris 06, CNRS, IMPMC, IPGP, F-75015 Paris, France

[7] Univ Paris 07, CNRS, IMPMC, IPGP, F-75015 Paris, France

[8] Max Planck Gesell, Fritz Haber Inst, D-1000 Berlin, Germany

来源：

NANO LETTERS | 2010年 / 10卷 / 04期

关键词：

Graphene; electron-phonon coupling; Raman spectroscopy; RAMAN-SPECTROSCOPY; RENORMALIZATION; SCATTERING; STATE;

D O I：

10.1021/nl9034626

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.

引用

页码：1172 / 1176

页数：5

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