Progress in Developing High-Power InGaN LEDs for Illumination

被引：0
|
作者：
Bando, Kanji [1 ]
机构：
[1] Nichia Corp, LED Engn Div, 429 Kaminaka, Anan, Tokushima 7748601, Japan
来源：
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 3 | 2012年 / 19卷
关键词：
high reflection type; 180Im/VV; white chip; multi-phosphor; color rendering;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power LEDs for general lightings' are reviewed. Blue chip of 1.4x1.4mm2 with high reflection structure is shown to emit radiant flux of 743mW at 350mA and 2841mW at 1500mA. External quantum efficiency reaches 77%, 68% at each drive current. White LED with 2x2 mm2 chip made by the same technology exhibits 181 Im/W at 350mA (correlated color temperature 5000K). New packaging technology such as phosphor coating on the top surface of the chip and improving color rendering index by multi-phosphor system are developed with improving the chip performance..
引用
收藏
页码：1659 / 1662
页数：4
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