Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires

被引：1

作者：

Hanke, Michael ^{[1
]}

Richter, Carsten ^{[2
]}

Lange, Felix ^{[2
]}

Reis, Anna ^{[1
]}

Parker, Julia ^{[3
]}

Boeck, Torsten ^{[2
]}

机构：

[1] Leibniz Insti Forschungsverbund Berlin eV, Paul Drude Inst Festkorperelek, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

[2] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

[3] Diamond Light Source, Didcot OX11 0DE, Oxon, England

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 10期

关键词：

DIFFRACTION;

D O I：

10.1063/5.0085788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have spatially investigated lattice spacing, twist, and bending in individual laterally (110)-oriented Ge nanowires (NWs) on pre-patterned Si(001) substrates. A combination of synchrotron-based scanning x-ray diffraction microscopy with an x-ray focus size of 50 nm and numerical finite element calculations on the elastic strain reveals a three-dimensional relaxation scenario, which becomes particularly complex next to NW nucleation points. Despite a lattice mismatch of 4.2%, lattice compliance is preserved, since strain can effectively be released close to the seeding window. Areas in the NWs other than that appear fully relaxed. The resulting NW twist, i.e., lattice rotations around the growth axis, amounts to less than 0.1 & DEG;.& nbsp;(c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

引用

页数：6

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