Particle-Based Device Modeling

被引：0
|
作者：
Dimitrijev, Sima [1 ,2 ]
机构：
[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia
[2] Griffith Univ, Sch Engn & Built Environm, Nathan, Qld 4111, Australia
来源：
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
关键词：
device modeling; thermal emission; carrier capture; carrier generation; recombination; thermionic emission; tunneling; single-carrier events; SiC Schottky diode; THERMAL EMISSION RATES; GOLD; ENERGY; LEVEL;
D O I：
10.1109/edtm47692.2020.9117849
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The key concepts in standard device modeling, such as continuous carrier concentration and continuous current, are questionable when the average number of carriers is smaller than one electron or one hole. This is not a rare scenario because the average number of minority carriers in semiconductor devices is almost always smaller than one carrier. In this paper, we demonstrate that the carrier generation, recombination, thermionic emission, and tunneling can be modeled by equations developed for single-carrier events.
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页数：4
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