A novel harmonic noise frequency filtering VCO for optimizing phase noise

被引：2
|
作者：
Yoon, Jae-Ho [1 ]
Lee, Sang-Hun [1 ]
Koh, Ah-Rah [1 ]
Shrestha, Bhanu [1 ]
Cheon, Sang-Hoon [2 ]
Kennedy, Gary P. [1 ]
Kim, Nam-Young [1 ]
机构：
[1] Kwangwoon Univ, RFIC Res & Educ Ctr, Seoul 139701, South Korea
[2] Knowledge Inc, Iksan 570210, South Korea
来源：
2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年
关键词：
harmonic noise frequency filtering technique; phase noise; InGaP/GaAs heterodyne bipolar transistor (HBT); LC-voltage controlled oscillators (LC-VCOs); cross-coupled differential configuration;
D O I：
10.1109/MWSYM.2006.249745
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaP/GaAs HBT LC-VCOs designed with and without the proposed Harmonic Noise Frequency Filtering (HNFF) technique are presented here. To optimize phase noise, the HNFF technique is compared using noise frequency filtering capacitors. The HNFF-VCO produced ultra low phase noise performance. The tuning range of this VCO is 261 MHz with an output power of -10.25 dBm at 1.721 GHz carrier. Furthermore, the phase noise of this VCO -133.96 dBc/Hz at 1 MHz offset. The HNFF-VCO is designed with a total chip area of 0.9 X 0.9 mm(2). Its phase noise performance is enhanced by 8.9 dBc at 1 MHz offset by comparison with a N-VCO without the HNFF technique.
引用
收藏
页码：1805 / +
页数：2
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