Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts

被引：4
|
作者：
Singh, Manisha R. [1 ]
Sahni, Mohit [2 ]
Singh, Munendra [2 ]
Bhattacharya, Bhaskar [3 ]
Kumar, Naresh [4 ]
机构：
[1] Sharda Univ, Dept E&C Engn, SET, Greater Noida 201310, UP, India
[2] Sharda Univ, Dept Phys, SBSR, Greater Noida 201310, UP, India
[3] Banaras Hindu Univ, Dept Phys, MMV, Varanasi 221005, UP, India
[4] MNNIT, Dept Phys, Allahabad 211004, UP, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 14期
关键词：
OXIDE THIN-FILMS;
D O I：
10.1007/s10854-019-01691-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work shows a comparative study of two types of surface barrier diodes (SBDs). RF magnetron sputtering was used to fabricate Al doped ZnO films (Al0.02Zn0.98O) at two different temperatures (100 and 300 degrees C) and then the structural and optical properties of these thin films were obtained and analyzed using SEM, AFM, XRD, EDX and UV-Vis spectroscopy. Then the heterojunction layers Pd/Al-ZnO/p-Si (SBD1) & Au/Al-ZnO/p-Si (SBD2) were prepared using these Al-ZnO films (developed at both the temperatures). Optical and electrical properties and the effect of temperature on ideality factor, barrier potential and carrier concentration of both the SBDs were also studied.
引用
收藏
页码：13280 / 13289
页数：10
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