Investigation of the Breakdown Voltage Degradation under Hot-Carrier Injection in STI-based PchLDMOS Transistors

被引：0

作者：

Kasai, Hirotaka ^{[1
]}

Shinohara, Daisuke ^{[1
]}

Shimizu, Mariko ^{[1
]}

Ishii, Yoshiaki ^{[1
]}

Komatsu, Kanako ^{[1
]}

Sakamoto, Toshihiro ^{[1
]}

Yonemura, Koji ^{[1
]}

Matsuoka, Fumitomo ^{[1
]}

机构：

[1] Toshiba Elect Devices & Storage Corp, Saiwai Ku, 580-1 Horikawa Cho, Kawasaki, Kanagawa 2128520, Japan

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

PchLDMOS; Hot-carrier; Reliability; BVdss degradation;

D O I：

10.1109/ispsd46842.2020.9170073

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Hot-carrier injection causes characteristics change of semiconductor devices. In this work, off-state breakdown voltage (BVdss) degradation of shallow trench isolation (STI) based PchLDMOS under drain avalanche hot-carrier (DAHC) stress has been investigated. We found that the cause of the degradation was a trapped charge at the bottom area of STI rather than STI corner. The mechanism of BVdss degradation was clarified and a tolerant LDMOS structure is proposed.

引用

页码：427 / 430

页数：4

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