Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems

The Cu thin films were deposited on p-type Si (111) substrates by magnetron sputtering at room temperature. The diffusion and interface reaction of Cu/SiO2/Si (111) Systems were studied for different annealing temperatures by X-ray diffraction (XRD) and Rutherford backscattering (RBS). We obtained some useful results in the following aspects: The onset temperature of interdiffusion was 450 degrees C for the Cu/SiO2/Si (111) systems. With the increase of annealing temperature, the interdiffusion was more apparent. There were no copper silicides formed below annealing temperature of 450 degrees C for the Cu/SiO2/Si (111) systems. The onset temperature of silicification was 500 degrees C. Copper silicides were formed on the samples after annealing at 500 degrees C.