LED-Triggered Photoconductive Semiconductor Switches for Nanosecond Pulse Generation

被引:0
|
作者
Ren, Wei [1 ,2 ]
Jiang, Chunqi [1 ,3 ]
机构
[1] Old Dominion Univ, Frank Reidy Res Ctr Bioelect, Norfolk, VA 23529 USA
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi, Peoples R China
[3] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
关键词
Light-emitting diode (LED); photoconducting semiconductor switches; gallium arsenide;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photoconductive semiconductor switch (PCSS) is of interest to the high voltage, pulsed power technology and their applications due to its excellent properties of high hold-off voltage, fast response time, low jitter and robust stability. It is known that optical switches have advantages in electrical insulation and flexibility over electrical switches especially for high voltage pulsed power switching. PCSSs are solid-state switches but optically triggered, and thereby promise low jitter, delay, and free of electromagnetic interference [1]. The traditional optical sources for triggering PCSS are nanosecond solid-state lasers or laser diodes and the lowest optical energy of triggering was reported at about 2 nJ [2]. With the recent development of light-emitting diodes (LEDs), triggering of PCSS with LEDs may be possible [3]. We report here a nanosecond pulsed power generation using a LED-triggered PCSS. A GaAs-based PCSS was tested to hold off up to 4.5 kV with a LED-based optical pulse. When the LED was driven by a 16.3-ns pulsed current of 110 A, with a rise time of 7.75 ns, the optical pulse of 0.8 nJ switched the PCSS into a low conductive phase, however, was not sufficient to fully turn on the PCSS (to a linear mode).
引用
收藏
页码:36 / 39
页数:4
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