Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

被引：1
|
作者：
Wang Gang [1 ]
Ma YuXiang [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
CHINESE SCIENCE BULLETIN | 2009年 / 54卷 / 20期
基金：
中国国家自然科学基金;
关键词：
avalanche photodiodes; excess noise factor; dead space; InP; GAAS P(+)-I-N(+) DIODES; IMPACT-IONIZATION; NOISE CHARACTERISTICS; SEMICONDUCTORS; ELECTRON;
D O I：
10.1007/s11434-009-0400-3
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
An ensemble Monte Carlo simulation is presented to investigate the avalanche multiplication process in thin InP avalanche photodiodes (APDs). Analytical band structures are applied to the description of the conduction and valence band, and impact ionization is treated as an additional scattering mechanism with the Keldysh formula. Multiplication gain and excess noise factor of InP p(+)-i-n(+) APDs are simulated and obvious excess noise reduction is found in the thinner devices. The effect of dead space on excess noise in thin APD structures is investigated by the distribution of impact ionization events within the multiplication region. It is found that the dead space can suppress the feedback ionization events resulting in a more deterministic avalanche multiplication process and reduce the excess noise in thinner APDs.
引用
收藏
页码：3685 / 3690
页数：6
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