Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN

被引：7

作者：

Nagamatsu, Kentaro ^{[1
]}

Liu, Xiaotong ^{[2
]}

Uesugi, Kenjiro ^{[1
]}

Miyake, Hideto ^{[1
,2
]}

机构：

[1] Mie Univ, Strateg Planning Off Reg Revitalizat, Tsu, Mie 5148507, Japan

[2] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

LIGHT-EMITTING-DIODES; HIGH-QUALITY ALN; WATER DISINFECTION; GROWTH; ALGAN; MG; CRYSTALS; EPITAXY; ENERGY;

D O I：

10.7567/1347-4065/ab07a1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents the effects of Mg concentration in a Mg-doped aluminum nitride (AlN) strain relaxation layer according to the metalorganic vapor-phase epitaxy method. A UV LED using a Mg-doped AlN strain relaxation layer at a Mg concentration of 3 x 10(20) cm(-3) on a sputterannealed AlN template produced light output power 11 times as high as that with conventional LED structures. The AlGaN-on-AlN relaxation rate and LED light output power increased starting from Mg concentrations of 10(19) cm(-3). These characteristics had almost the same values when the Mg concentration was less than 3 x 10(19) cm(-3). These results show the improvement of efficiency caused by void formation due to the inversion domain. (C) 2019 The Japan Society of Applied Physics.

引用

页数：4