Tunable ferromagnetism by oxygen vacancies in Fe-doped In2O3 magnetic semiconductor

被引：35
|
作者：
Xing, P. F. [1 ,2 ]
Chen, Y. X. [1 ,2 ]
Yan, Shi-Shen [1 ,2 ]
Liu, G. L. [1 ,2 ]
Mei, L. M. [1 ,2 ]
Zhang, Z. [3 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Natl Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
[3] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 04期
关键词：
ROOM-TEMPERATURE; MN; FILMS;
D O I：
10.1063/1.3202287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fe-doped In2O3 films with well defined bec (440) texture were grown on r-cut sapphire at different oxygen pressures by pulsed laser deposition. Nonmonotonic dependence of ferromagnetism on oxygen pressure has been observed. Under optimal deposition conditions, the saturation magnetization can reach 2.5 mu(B)/Fe atom. Moreover, the ferromagnetism can be reversed between the higher magnetization state and the lower magnetization state by alternate annealing in vacuum and in air. All these features are well explained by a modified model of F-center mediated ferromagnetism. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3202287]
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页数：4
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