Physical trends in amorphous carbon: A tight-binding molecular-dynamics study

被引:48
|
作者
Mathioudakis, C
Kopidakis, G
Kelires, PC
Wang, CZ
Ho, KM
机构
[1] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece
[2] Iowa State Univ Sci & Technol, Ames Lab, Ames, IA 50011 USA
[3] Iowa State Univ Sci & Technol, Dept Phys, Ames, IA 50011 USA
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 12期
关键词
D O I
10.1103/PhysRevB.70.125202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tight-binding molecular dynamics simulations reveal interesting physical trends in amorphous carbon networks. The variation of sp(3) fraction, or mean coordination, is found to be linear over the whole possible range of densities. The density at the floppy transition is similar to0.5 g cm(-3), while the density of "amorphous diamond" is similar to3.3 g cm(-3). The bulk modulus vanishes at the floppy transition, having a critical coordination near 2.4, and its variation with the mean coordination has a scaling exponent of 1.5, confirming the constraint-counting model of Phillips and Thorpe. A hypothetical fully tetrahedral network has a bulk modulus of 360 GPa, about 15% lower than diamond's. The bulk modulus is also found to vary with the average bond length (d) over bar as ((d) over bar)(3.5). The homopolar gap of "amorphous diamond" is similar to11.5 eV, compared to similar to14 eV for diamond.
引用
收藏
页码:125202 / 1
页数:10
相关论文
共 50 条
  • [1] TIGHT-BINDING MOLECULAR-DYNAMICS STUDY OF AMORPHOUS-CARBON
    WANG, CZ
    HO, KM
    CHAN, CT
    [J]. PHYSICAL REVIEW LETTERS, 1993, 70 (05) : 611 - 614
  • [2] Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces
    Fu, CC
    Weissmann, M
    [J]. PHYSICAL REVIEW B, 1999, 60 (04): : 2762 - 2770
  • [3] Tight-binding molecular-dynamics simulations of amorphous silicon carbides
    Ivashchenko, VI
    Turchi, PEA
    Shevchenko, VI
    Ivashchenko, LA
    Rusakov, GV
    [J]. PHYSICAL REVIEW B, 2002, 66 (19): : 1 - 6
  • [4] Vacancies in amorphous silicon: A tight-binding molecular-dynamics simulation
    Kim, E
    Lee, YH
    Chen, CF
    Pang, T
    [J]. PHYSICAL REVIEW B, 1999, 59 (04): : 2713 - 2721
  • [5] Tight-binding molecular-dynamics study of density-optimized amorphous GaAs
    Seong, H
    Lewis, LJ
    [J]. PHYSICAL REVIEW B, 1996, 53 (08): : 4408 - 4414
  • [6] O(N) tight-binding molecular dynamics study of amorphous carbon
    Wang, CZ
    Qiu, SY
    Ho, KM
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 1997, 7 (03) : 315 - 323
  • [7] A tight-binding molecular-dynamics study of copper clusters
    Taneda, A
    Kawazoe, Y
    [J]. MATERIALS TRANSACTIONS JIM, 1999, 40 (11): : 1255 - 1257
  • [8] TIGHT-BINDING MOLECULAR-DYNAMICS STUDY OF LIQUID SI
    WANG, CZ
    CHAN, CT
    HO, KM
    [J]. PHYSICAL REVIEW B, 1992, 45 (21): : 12227 - 12232
  • [9] Tight-binding molecular-dynamics study of ferromagnetic clusters
    Andriotis, AN
    Menon, M
    [J]. PHYSICAL REVIEW B, 1998, 57 (16) : 10069 - 10081
  • [10] TIGHT-BINDING MOLECULAR-DYNAMICS STUDY OF DEFECTS IN SILICON
    WANG, CZ
    CHAN, CT
    HO, KM
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (02) : 189 - 192