4.5kV Insulated Gate Triggered Thyristor (IGTT) with High di/dt Characteristics for Pulse Power Applications

被引：0

作者：

Liu, Chao ^{[1
]}

Chen, Wanjun ^{[1
]}

Shi, Yijun ^{[1
]}

Qiao, Bin ^{[1
]}

Jiang, Qian ^{[1
]}

Xia, Yun ^{[1
]}

Zhou, Qijun ^{[1
]}

Xu, Xiaorui ^{[1
]}

Zhou, Qi ^{[1
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

基金：

中国国家自然科学基金;

关键词：

Pulse power; insulated gate thyristor; di/dt; SINGLE; MCT;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we propose a high-voltage (HV) insulated gate triggered thyristor (IGTT) as solid-state closing switch (SSCS) for pulse power applications. The mechanism of proposed HV IGTT is analyzed by TCAD simulation. Special design with consideration of the transient 2-D effect are carried out for enhancing conductivity modulation and achieving high di/dt characteristics. With experimental measurements, the characterizations of the fabricated HV IGTT are presented. The experimental results show that the fabricated HV IGTT features blocking voltage over 4500V and performs a di/dt up to 239 kA/cm(2)/mu s with peak current over 5.5kA.

引用

页码：347 / 350

页数：4

共 12 条

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