The 4 masks a-IGZO TFT structure with high uniformity and electrical stability

被引：0
|
作者：
Yan, JinoYi [1 ]
Tsai, Wu-Wei [1 ]
Hung, Chu-Yin [1 ]
Yao, Hsiao-Chiang [1 ]
Chen, Liang-Hsiang [1 ]
Lin, Hung-Chien [1 ]
Lin, Yu-Ching [1 ]
机构：
[1] Ind Technol Res Inst, Display Technol Ctr, 195-4,Sec 4,Chung Hsing Rd Chutung, Hsinchu, Taiwan
来源：
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 | 2012年 / 19卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article provides the four masks structure and process for channel protection a-IGZO TFTs. The hybrid channel protection structure is development to replace the PECVD SiO2 and improve the stability and manufacturing yield. TFT mobility is over 20cm(2)/Vs, and standard derivation of Vth is less than 0.03V. The Vth shift is less than 0.6V after electrical stress.
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收藏
页码：849 / 850
页数：2
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