EMC immunity test for capacitive shunt RF-MEMS switch

被引：0

作者：

Jmai, Bassem ^{[1
]}

Rajhi, Adnen ^{[2
]}

Gharsallah, Ali ^{[1
]}

机构：

[1] FST, Dept Phys, Unit Res High Frequency Elect Circuits & Syst, Tunis, Tunisia

[2] Carthage Natl Sch Engn, Dept Elect Engn, Dept Phys, FST,Lab Phys Soft Mat & Modelisat, Tunis, Tunisia

来源：

2015 16TH INTERNATIONAL CONFERENCE ON SCIENCES AND TECHNIQUES OF AUTOMATIC CONTROL AND COMPUTER ENGINEERING (STA) | 2015年

关键词：

RF-IC; EMC; RF MEMS; SiC; Si; GaAs;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The Radio Frequency Micro-electromechanical system (RF MEMS) has compact geometries and are very used in Monolithic Microwave Integrate Circuit (MMIC) for different important applications with respect to their size and their effectiveness. Its effectiveness can be improved by reducing the ElectroMagnetic Interference EMI problem with better Electromagnetic compatibility EMC immunity of the component. This work presents the EMC immunity testing of RF-MEMS for different substrate cases Silicon (Si), Gallium Arsenide (GaAs) and Silicon Carbide (SiC). This MEMS structure is exited by used the electromagnetic solver HFSS (high frequency structural an external parasite line witch will induce au EM radiation around the MEMS component; In order to analyze the EM test immunity of the MEMS we simulator) based on finite element method for simulation. For the different substrates, a comparative study of the electric and magnetic fields is exposed and discussed. We have investigated also on the surface current densities on the RF line. The results show that the material SiC has better performances in the immunity test than Si and GaAs substrates.

引用

页码：152 / 157

页数：6

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