Ab initio study of electronic and magnetic properties of GaSb/Mn and GaAs/Mn digital ferromagnetic heterostructures

被引：0
|
作者：
Titov, A. [1 ]
Kulatov, E. [1 ]
Uspenskii, Yu. A. [2 ]
Tugushev, V. V. [3 ]
Michelini, F. [4 ]
Mariette, H. [5 ]
机构：
[1] RAS, AM Prokhorov Gen Phys Inst, Vavilov Str 38, Moscow 119991, Russia
[2] RAS, PN Lebedev Phys Inst, Moscow 117924, Russia
[3] RRC Kurchatov Inst, Moscow 123182, Russia
[4] CNRS, Fac Sci & Tech St Jerome, IM2NP, UMR 624, F-13397 Marseille, France
[5] Inst Neel, F-38042 Grenoble, France
来源：
MAGNETISM AND MAGNETIC MATERIALS | 2009年 / 152-153卷
基金：
俄罗斯基础研究基金会;
关键词：
digital ferromagnetic heterostructures; ab initio calculation; spintronics; ALLOYS;
D O I：
10.4028/www.scientific.net/SSP.152-153.533
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electronic and magnetic properties of GaSb/Mn and GaAs/Mn digital heterostructures were studied using the augmented plane wave method. The calculated electronic structures of GaSb/Mn and GaAs/Mn are similar. A pre-edge absorption line at 6541 eV should be observed in Mn K-edge x-ray absorption spectra of the heterostructures. This line can be used to study the spatial distribution of Mn in layers. The energy of exchange interaction between two Mn layers was calculated as a function of interlayer separation. Different dependencies of the exchange energy are found for GaSb/Mn and GaAs/Mn heterostructures.
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页码：533 / +
页数：2
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