Pure spin currents in Ge probed by inverse spin-Hall effect

被引：2

作者：

Bottegoni, F. ^{[1
]}

Zucchetti, C. ^{[1
]}

Finazzi, M. ^{[1
]}

Isella, G. ^{[1
]}

Ciccacci, F. ^{[1
]}

机构：

[1] Politecn Milan, LNESS Dipartimento Fis, Piazza Leonardo Vinci 32, I-20133 Milan, Italy

来源：

AIP ADVANCES | 2017年 / 7卷 / 05期

关键词：

PHOTOEMISSION; GAAS; POLARIZATION; PHOTOELECTRONS; LAYER;

D O I：

10.1063/1.4973392

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Gamma point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Gamma - L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field E-ISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be tau(s) = 1 ns. (C) 2016 Author(s).

引用

页数：5

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