High-brightness AlGaInN light-emitting diodes

被引：29

作者：

Krames, MR ^{[1
]}

Christenson, G ^{[1
]}

Collins, D ^{[1
]}

Cook, LW ^{[1
]}

Craford, MG ^{[1
]}

Edwards, A ^{[1
]}

Fletcher, RM ^{[1
]}

Gardner, N ^{[1
]}

Goetz, W ^{[1
]}

Imler, W ^{[1
]}

Johnson, E ^{[1
]}

Kern, RS ^{[1
]}

Khare, R ^{[1
]}

Kish, FK ^{[1
]}

Lowery, C ^{[1
]}

Ludowise, MJ ^{[1
]}

Mann, R ^{[1
]}

Maranowski, M ^{[1
]}

Maranowski, S ^{[1
]}

Martin, PS ^{[1
]}

O'Shea, J ^{[1
]}

Rudaz, S ^{[1
]}

Steigerwald, D ^{[1
]}

Thompson, J ^{[1
]}

Wierer, JJ ^{[1
]}

Yu, J ^{[1
]}

Basile, D ^{[1
]}

Chang, YL ^{[1
]}

Hasnain, G ^{[1
]}

Hueschen, M ^{[1
]}

Killeen, K ^{[1
]}

Kocot, C ^{[1
]}

Lester, S ^{[1
]}

Miller, J ^{[1
]}

Mueller, G ^{[1
]}

Mueller-Mach, R ^{[1
]}

Rosner, J ^{[1
]}

Schneider, R ^{[1
]}

Takeuchi, T ^{[1
]}

Tan, TS ^{[1
]}

机构：

[1] LumiLeds Lighting, San Jose, CA 95131 USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV | 2000年 / 3938卷

关键词：

LED; light-emitting diode; gallium nitride; high power LED; AlGaInN; InGaN;

D O I：

10.1117/12.382822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for high-power AlGaInN LEDs are presented along with their performance in terms of output power and efficiency. Finally, present and potential applications for high-power AlGaInN LEDs, including traffic signals and contour lighting, are discussed.

引用

页码：2 / 12

页数：11

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