Anisotropy effects in the formation of a regular stepped structure on the surface of homoepitaxial gallium arsenide

被引：0
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作者：
Voronkov, VV
Zhukova, LA
Milvidskii, MG
Simonova, TV
Yugova, TG
Anokhina, EN
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KRISTALLOGRAFIYA | 1997年 / 42卷 / 01期
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O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：154 / 156
页数：3
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