topological states of matter;
fractionalized states;
anyons;
QUANTIZED HALL CONDUCTANCE;
ANYONS;
D O I:
10.1146/annurev-conmatphys-031115-011559
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Fractional topological insulators (FTIs) are electronic systems that carry fractionally charged excitations, conserve charge, and are symmetric to reversal of time. In this review, we introduce the basic essential concepts of the field and then survey theoretical understanding of FTIs in two and three dimensions. In between, we discuss the case of "two and a half dimensions," the FTIs that may form on the two-dimensional surface of an unfractionalized three-dimensional topological insulator. We focus on electronic systems and emphasize properties of edges and surfaces, most notably the stability of gapless edge modes to perturbations.
机构:
Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93109 USAHarvard Univ, Dept Phys, Cambridge, MA 02138 USA
机构:
Stanford Univ, Dept Phys, Stanford, CA 94305 USA
Univ Calif Santa Barbara, Santa Barbara, CA 93106 USAStanford Univ, Dept Phys, Stanford, CA 94305 USA
Qi, Xiao-Liang
Karch, Andreas
论文数: 0引用数: 0
h-index: 0
机构:
Univ Washington, Dept Phys, Seattle, WA 98195 USAStanford Univ, Dept Phys, Stanford, CA 94305 USA
Karch, Andreas
Zhang, Shou-Cheng
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Phys, Stanford, CA 94305 USAStanford Univ, Dept Phys, Stanford, CA 94305 USA