Optical properties of hydrogenated ZnO-Ga thin films studied by spectroscopic ellipsometry

被引：0
|
作者：
Yang Jiao [1 ]
Gao Mei-Zhen [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2016年 / 35卷 / 01期
基金：
中国国家自然科学基金;
关键词：
GZO thin film; hydrogen treatment; spectroscopic ellipsometry; double oscillator model; ZINC-OXIDE; TRANSPARENT; DEPOSITION;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.
引用
收藏
页码：6 / 10
页数：5
相关论文
共 30 条
  • [1] Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition
    Asahara, Hirokazu
    Takamizu, Daiju
    Inokuchi, Atsutoshi
    Hirayama, Masaki
    Teramoto, Akinobu
    Saito, Shin
    Takahashi, Migaku
    Ohmi, Tadahiro
    [J]. THIN SOLID FILMS, 2010, 518 (11) : 2953 - 2956
  • [2] Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature
    Assunçao, V
    Fortunato, E
    Marques, A
    Aguas, H
    Ferreira, I
    Costa, MEV
    Martins, R
    [J]. THIN SOLID FILMS, 2003, 427 (1-2) : 401 - 405
  • [3] The effect of substrate temperature on filtered vacuum are deposited zinc oxide and tin oxide thin films
    Cetinorgu, E.
    Goldsmith, S.
    Boxman, R. L.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 299 (02) : 259 - 267
  • [4] Spectroscopic ellipsometry characterization of ZnO-In2O3 systems
    El Rhaleb, H
    Naciri, AE
    Dounia, R
    Johann, L
    Hakam, A
    Addou, M
    [J]. THIN SOLID FILMS, 2004, 455 : 384 - 387
  • [5] The effect of heating rate on the structural and electrical properties of sol-gel derived Al-doped ZnO films
    Gao, Meizhen
    Wu, Xiaonan
    Liu, Jing
    Liu, Wenbao
    [J]. APPLIED SURFACE SCIENCE, 2011, 257 (15) : 6919 - 6922
  • [6] PHOTOELECTROCHEMICAL DECOMPOSITION OF SURFACTANTS ON A TIO2/TCO PARTICULATE FILM ELECTRODE ASSEMBLY
    HIDAKA, H
    ASAI, Y
    ZHAO, JC
    NOHARA, K
    PELIZZETTI, E
    SERPONE, N
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (20): : 8244 - 8248
  • [7] Optical and electronic properties of highly stable and textured hydrogenated ZnO:Al thin films
    Hwang, Younghun
    Kim, Hyungmin
    Um, Youngho
    Park, Hyoyeol
    [J]. MATERIALS RESEARCH BULLETIN, 2012, 47 (09) : 2487 - 2491
  • [8] Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth
    Johs, B
    Herzinger, CM
    Dinan, JH
    Cornfeld, A
    Benson, JD
    [J]. THIN SOLID FILMS, 1998, 313 : 137 - 142
  • [9] Structural and morphological properties of ZnO:Ga thin films
    Khranovskyy, V.
    Grossner, U.
    Nilsen, O.
    Lazorenko, V.
    Lashkarev, G. V.
    Svensson, B. G.
    Yakimova, R.
    [J]. THIN SOLID FILMS, 2006, 515 (02) : 472 - 476
  • [10] MODELING THE OPTICAL DIELECTRIC FUNCTION OF SEMICONDUCTORS - EXTENSION OF THE CRITICAL-POINT PARABOLIC-BAND APPROXIMATION
    KIM, CC
    GARLAND, JW
    ABAD, H
    RACCAH, PM
    [J]. PHYSICAL REVIEW B, 1992, 45 (20) : 11749 - 11767
123