Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS2

被引:50
|
作者
Yang, Luyi [1 ]
Chen, Weibing [2 ]
McCreary, Kathleen M. [3 ]
Jonker, Berend T. [3 ]
Lou, Jun [2 ]
Crooker, Scott A. [1 ]
机构
[1] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
[2] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[3] Naval Res Lab, Mat Sci & Technol Div, Washington, DC 20375 USA
关键词
2D Semiconductor; monolayer MoS2; spin coherence; dichalcogenide; VALLEY POLARIZATION; QUANTUM; RELAXATION; EMITTERS; GROWTH; LAYER;
D O I
10.1021/acs.nanolett.5b03771
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS2. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond time scale Larmor spin precession signal commensurate with g-factor lgol 1.86 is observed in several different Mo52 samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a subensemble of localized electron spins having an inhomogeneously broadened distribution of g-factors, go + Delta g. In contrast to go, Ag is sample-dependent and ranges from 0.042 to 0.115.
引用
收藏
页码:8250 / 8254
页数:5
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