Oxidation kinetics of low-oxygen silicon carbide fiber

被引：55
|
作者：
Shimoo, T [1 ]
Toyoda, F [1 ]
Okamura, K [1 ]
机构：
[1] Univ Osaka Prefecture, Coll Engn, Dept Met & Mat Sci, Sakai, Osaka 5998531, Japan
来源：
JOURNAL OF MATERIALS SCIENCE | 2000年 / 35卷 / 13期
关键词：
D O I：
10.1023/A:1004883607913
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of partial pressure and temperature on the oxidation rate of low-oxygen silicon carbide fiber (Hi-Nicalon) has been investigated. The initial oxidation rate was described by a two-dimensional disc contracting formula for reaction control, and the activation energy was 155 kJ/mol. The rate at the later stage of oxidation obeyed the equation for diffusion control, and the activation energy was 109 kJ/mol. Both the rate constants were proportional to oxygen partial pressure. The diffusion species through the SiO2 film are considered to be oxygen molecules. (C) 2000 Kluwer Academic Publishers.
引用
收藏
页码：3301 / 3306
页数：6
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