Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures

被引：1
|
作者：
Mori, J
Asahi, H
Fudeta, M
Noh, JH
Watanabe, D
Matsuda, S
Asami, K
Narukawa, Y
Kawakami, Y
Fujita, S
Kaneko, T
Gonda, S
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Kwansei Gakuin Univ, Sch Sci, Sanda, Hyogo 6691337, Japan
[3] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 159卷
关键词：
GaP/InP short period superlattice; quantum dot; self-formation; gas source MBE; STM; STS; time-resolved photoluminescence;
D O I：
10.1016/S0169-4332(00)00090-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
GaP/InP short period superlattices (SLs) are grown on GaAs (311)A substrates by gas source molecular beam epitaxy (MBE). Scanning tunneling microscopy/spectroscopy (STM/STS) measurements show that the quantum dot (QD) structures are self-formed with a lateral density of 10(11) cm(-2). Growth temperature dependence of self-formed structures is studied with STM/STS and clear temperature dependence is observed. Optimum growth temperature is about 460 degrees C. Time-resolved photoluminescence (PL) spectroscopy measurement on the multilayer QD (MQD) structures shows that the PL decay time strongly depends on emission energy and temperature, and ranges from 0.1 to 2.5 ns, which can be explained by considering the tunneling effect of carriers between QDs. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：498 / 502
页数：5
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