Spin dependence of edge-channel transport in silicon-based quantum Hall systems

被引：0
|
作者：
Hamaya, Kohei [1 ]
Masubuchi, Satoru
Sawano, Kentarou [1 ]
Shiraki, Yasuhiro [1 ]
Machida, Tomoki
机构：
[1] Musashi Inst Technol, Res Ctr Silicon Nano Sci, Adv Res Lab, Tokyo 1580082, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 | 2006年 / 3卷 / 12期
关键词：
D O I：
10.1002/pssc.200672805
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By nonequally populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down, while the inter-edge-channel scattering is strongly promoted as the spin orientations of both the relevant edge channels are switched to spin-down. The evident spin dependence of the adiabatic edge-channel transport originates from a weak spin-orbit interaction in silicon-based two-dimensional electron systems. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4251 / 4254
页数：4
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