Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal

被引：4
|
作者：
Uwatoko, Y
Kosaka, M
Shirakawa, M
Oomi, G
Môri, N
Kobayashi, T
Tatewaki, H
Shimizu, K
Amaya, K
机构：
[1] Saitama Univ, Fac Sci, Dept Phys, Urawa, Saitama 3388570, Japan
[2] Kumamoto Univ, Fac Engn, Kumamoto 8608555, Japan
[3] Univ Tokyo, Inst Solid State Phys, Tokyo 1060032, Japan
[4] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Osaka 5608531, Japan
[5] Osaka Univ, Fac Engn Sci, Dept Mat Phys, Osaka 5608531, Japan
来源：
PHYSICA B | 2000年 / 284卷
关键词：
antiferromagnetic ordering; effect of pressure; electrical resistivity; specific heat;
D O I：
10.1016/S0921-4526(99)02593-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal have been measured upto 30 kbar. A sharp peak in the ratio of specific heat to temperature and in electrical resistivity is observed at 33 and 3.5 K, respectively, which is ascribed to an antiferromagnetic transition. The results reveal that T-N decreases linearly with increasing pressure upto 30 kbar. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1321 / 1322
页数：2
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