Blue flip-chip AlGaInN LEDs with removed sapphire substrate

被引：7

作者：

Smirnova, I. P. ^{[1
]}

Markov, L. K. ^{[1
]}

Zakheim, D. A. ^{[1
]}

Arakcheeva, E. M. ^{[1
]}

Rymalis, M. R. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2006年 / 40卷 / 11期

关键词：

D O I：

10.1134/S1063782606110194

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Characteristics of AlGaInN LEDs with removed sapphire substrate are studied. To remove the substrate from a finished LED crystal mounted by the flip-chip method onto a silicon wafer, the laser lift-off technique was used. To raise the light output efficiency, a scattering profile was formed on the n-GaN surface by ion etching in a Cl-2:Ar gas mixture. This resulted in the 25-30% increase in the external quantum efficiency of LEDs. The LEDs fabricated in this way demonstrate stable operation at drive currents of up to 300 mA with an optical power as high as 110 mW.

引用

页码：1363 / 1367

页数：5

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