Semiconductor generator of high-voltage rectangular pulses with controlled duration

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作者
Efanov, VM
KardoSysoev, AF
Yarin, PM
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T [工业技术];
学科分类号
08 ;
摘要
The scheme of a semiconductor generator producing rectangular pulses with a height of 1 kV, edges of 1-3 ns, and controlled duration from 5 to 50 ns is described. Operation of the generator is based on the principle of sharpening of a pulse, which is shaped by thyristor switches, with the use of fast-recovery drift diodes.
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页码:479 / 480
页数:2
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