Study on Different Surfactants for Post CMP Cleaning of Novel Barrier

被引：0
|
作者：
Tian, Siyu [1 ,2 ]
Tan, Baimei [1 ,2 ]
Wang, Qi [1 ,2 ]
Han, Chunyu [1 ,2 ]
Yang, Liu [1 ,2 ]
Gao, Baohong [1 ,2 ]
机构：
[1] Hebei Univ Technol, Sch Elect Informat Engn, Tianjin 300130, Peoples R China
[2] Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China
来源：
2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2019年
关键词：
post CMP cleaning; BTA; alkaline cleaning solution; copper-cobalt galvanic corrosion;
D O I：
10.1109/cstic.2019.8755724
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of different concentration of chelating agent and different surfactants and concentration changes on the removal of BTA and particles on copper surface were studied in this paper. The regularity and mechanism of anionic surfactant and nonionic surfactant in the post CMP cleaning process were analyzed. A novel alkaline cleaning solution was determined by means of the actual result of particle removal and galvanic corrosion detection which consists of a mass fraction of 200 ppm FA/O II chelating agent, 500 ppm LABSA, a trace amount of cesium hydroxide as a pH regulator. The novel solution has been indicated the high-efficiency in BTA and particle removal, strong inhibition of copper-cobalt galvanic corrosion.
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页数：3
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