Novel electroluminescence from Metal-Insulator-Semiconductor (MIS) structures on Si

被引：0

作者：

Lin, CF ^{[1
]}

Chen, MJ ^{[1
]}

Liang, EZ ^{[1
]}

Liu, WT ^{[1
]}

Chang, ST ^{[1
]}

Liu, CW ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

COMMAD 2000 PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/COMMAD.2000.1022975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature electroluminescence from metal-insulator-semiconductor (MIS) structures on Si was observed. Several types of MIS structures such as Al/SiO2/Si, ITO/SiO2/Si, and mechanically pressed ITO/Si contact, has been investigated. Both band-edge and visible electroluminescence are observed from the ITO/SiO2/Si structures. The devices based on the Al/SiO2/Si structure exhibit efficient band-edge electroluminescence. Electroluminescence near the silicon bandgap energy is also achieved from MIS structures using an innovative mechanically pressed ITO/Si contact. Optical phonons, interface roughness, localized carriers and impact ionization are used to explain radiative recombination in MIS structures.

引用

页码：403 / 406

页数：4

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