Structure and magnetic properties of FexGe1-x films

被引：7
|
作者：
Gao, Weixia [1 ,2 ]
Hou, Denglu [1 ,2 ]
Hu, Yuchan [1 ,2 ]
Wei, Shiqiang [3 ]
机构：
[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
[2] Hebei Normal Univ, Adv Thin Films Lab, Shijiazhuang 050016, Peoples R China
[3] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2009年 / 149卷 / 43-44期
基金：
美国国家科学基金会;
关键词：
Semiconductor; Structural properties; Room-temperature ferromagnetism; IRON; SEMICONDUCTOR; FE;
D O I：
10.1016/j.ssc.2009.07.040
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A series of FexGe1-x (x = 0, 0.0097, 0.019, 0.038, 0.056, 0.073, 0.089, 0.105) thin films were prepared by magnetron sputtering. Physical property measurement system (PPMS) measurements showed that such films have ferromagnetic properties at room temperature and that the ferromagnetism arises from the interaction of the Fe spins, mediated by hole carriers. From the studies of X-ray diffraction (XRD) we find no secondary phases in the films. X-ray photoelectron spectrum (XPS) and X-ray absorption fine structure (XAFS) indicate that the Fe ions are in the 0 and the +2 state. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1924 / 1927
页数：4
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