Integrated power transistor in 0.18-μm CMOS technology for RF system-on-chip applications

被引：13

作者：

Hsu, HM ^{[1
]}

Su, JG

Chen, CW

Tang, DD

Chen, CH

Sun, JYC

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Taiwan Semicond Mfg Co, Res Dev Ctr, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 12期

关键词：

0.18-mu m CMOS; RF power MOS transistor; system-on-chip (SoC);

D O I：

10.1109/TMTT.2002.805289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel design and performance of a power MOS transistor for RF system-on-chip applications are reported. The power MOS transistor with high breakdown voltage is integrated into 0.18-mum CMOS technology with only one additional mask. By an optimized design considering all aspects of dc and RF performances, a power MOS transistor with 16-GHz cutoff frequency and 24-GHz maximum oscillation frequency has been demonstrated. In addition, the power gain is 12 dB at 2.4 GHz with power-added efficiency of 50%. In this study, the device architectures that include drain engineering, substrate engineering, and gate scaling are investigated comprehensively.

引用

页码：2873 / 2881

页数：9

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