On the body-thickness dependence of the linearly extrapolated threshold voltage of a double-gate metal-oxide-semiconductor field-effect device

An approximate but simple expression explicitly relating the surface potential to the surface electric field of a symmetrical double-gate metal-oxide-semiconductor field-effect device is used to derive a compact expression for. the linearly, extrapolated threshold voltage V-Te of such a device with a uniformly doped channel region. The expression is shown to be valid for both partially and fully depleted devices. V-Te is predicted to exhibit a global minimum as the thickness of the channel is systematically increased.