4f-derived electronic structure at the surface and in the bulk of α-Ce metal -: art. no. 155116

Resonant photoemission experiments at the 4d-->4f absorption threshold of alpha-Ce are reported. Separation of spectral bulk and surface contributions is achieved by quenching the Ce-derived surface emission with a Dy overlayer. As in previous works, the outermost surface layer of alpha-Ce is found to be gamma-like. In contrast to theoretical predictions, however, the "4f(0) final-state" signal of the surface is shifted to higher binding energy with respect to alpha-Ce and gamma-Ce bulk emissions. The data are analyzed in the framework of the single-impurity Anderson model. Taking into account the influence of the autoionization channel to resonance process, a larger 4f hybridization is concluded than assuming solely a direct photoemission event.