Photocapacitance effect in a monopolar metal-insulator-semiconductor capacitor at low temperatures

The photocapacitance effect was theoretically studied in the case of optical ionization of impurity atoms in a monopolar MIS capacitor at low temperatures. Analytical expressions were derived for capacitance-voltage and photocapacitance-voltage characteristics of the MIS capacitor with a p-type semiconductor electrode. The dependence of photocapacitance sensitivity on bias was shown to exhibit a relatively narrow peak whose height and position depend on donor concentration. Capacitance and photocapacitance characteristics were calculated for the MIS capacitor with an indium-doped silicon electrode. (C) 2000 MAIK "Nauka/Interperiodica".