Dephasing in self-organized InAlGaAs quantum dots

被引：3
|
作者：
Leosson, K [1 ]
Birkedal, D [1 ]
Hvam, JM [1 ]
机构：
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
来源：
PHYSICA SCRIPTA | 2002年 / T101卷
关键词：
D O I：
10.1238/Physica.Topical.101a00143
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the first direct measurements of dephasing in III-V semiconductor quantum dots at low temperature using degenerate four-wave mixing. At OK, the coherence time is limited by the population lifetime whereas pure dephasing due to exciton-phonon interactions appears only at finite temperatures. We observe a striking discrepancy between the homogenous linewidth derived from the dephasing times and the measured photoluminescene linewidth of individual quantum dots, indicating the presence of an additional inhomogenous broadening mechanism in photoluminescence measurements of single quantum dots.
引用
收藏
页码：143 / 146
页数：4
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