High gain-bandwidth InP waveguide phototransistor

被引：1

作者：

Houtsma, V. E. ^{[1
]}

Leven, A. ^{[1
]}

Chen, J. ^{[1
]}

Frackoviak, J. ^{[1
]}

Tate, A. ^{[1
]}

Weimann, N. G. ^{[1
]}

Chen, Y. K. ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, 600 Mt Ave, Murray Hill, NJ 07974 USA

来源：

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/ICIPRM.2006.1634156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present. a high speed phototransistor with integrated waveguide based on our :I-nP double hetrojunction bipolar transistor (DHBT) process technology. We measured an optical-gain cutoff frequency F-opt of 447 GHz with an internal optical gain of over g(opt)=30 at a base current of I-b=650 mu A using devices with emitter dimensions of A=0.7 x 4 mu m(2).

引用

页码：229 / +

页数：3

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