Titanium Nitriding by Microwave Atmospheric Pressure Plasma: Towards Single Crystal Synthesis

被引：8
|
作者：
Cardoso, R. P. [1 ]
Arnoult, G. [1 ]
Belmonte, Thierry [1 ]
Henrion, G. [1 ]
Weber, Sylvian [2 ]
机构：
[1] Nancy Univ, CNRS, Lab Sci & Genie Surfaces, F-54042 Nancy, France
[2] Nancy Univ, CNRS, Phys Mat Lab, F-54042 Nancy, France
来源：
PLASMA PROCESSES AND POLYMERS | 2009年 / 6卷
关键词：
TI-N SYSTEM; NITROGEN DIFFUSION; TEMPERATURE; NITRIDATION; TI-6AL-4V; PYROMETRY; DISCHARGE; GROWTH;
D O I：
10.1002/ppap.200930704
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High temperature titanium nitriding is achieved by plasmas sustained at atmospheric pressure in a microwave resonant cavity. TiN layers produced in the temperature range (1475-1980 K) present a grain orientation that is mainly defined by initial grain orientation of the titanium substrate. Coarsening pretreatments on the titanium samples before nitriding allows the synthesis of a strongly oriented TiN layer. The TiN + alpha-Ti layer thickness reaches about 116 mu m after a 1 h treatment at 1760 K. For these treatment times, the bulk material is not totally transformed into TiN, but this is a first step towards the synthesis of single crystals of TiN from commercial-grade pure titanium.
引用
收藏
页码：S302 / S305
页数：4
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