Intrinsic Layer Zn Doping Diffusion Control and Bandwidth Modulation of InP/InGaAs/InP Photodiode

被引：1

作者：

Liu, Hongwei ^{[1
,2
]}

Wang, Xinwei ^{[1
,2
]}

Niu, Pingjuan ^{[1
,2
]}

Shields, Philip ^{[3
]}

Zhang, Zanyun ^{[1
,2
]}

Li, Xiaoyun ^{[1
,2
]}

Liu, Chao ^{[4
]}

Wang, Duxiang ^{[4
]}

机构：

[1] Tiangong Univ, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China

[2] Tiangong Univ, Tianjin Key Lab Optoelect Detect Technol & Syst, Tianjin 300387, Peoples R China

[3] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England

[4] Tianjin Sanan Optoelect Co Ltd, Tianjin 300392, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2021年 / 33卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Zinc; Indium gallium arsenide; Indium phosphide; III-V semiconductor materials; Pins; PIN photodiodes; Capacitance; Diffusion processes; microwave photonics; photodiodes; varactor;

D O I：

10.1109/LPT.2021.3071873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the InP/InGaAs/InP PIN photodetector material growth, zinc is a normal doping ion and it has a high diffusion coefficient in InP and InGaAs. The Zn diffusion depth at the p-InP and intrinsic InGaAs boundary is critical for PIN photodiode high frequency characteristics. We control the p-InP Zn doping diffusion into intrinsic InGaAs layer by reducing the growth temperature of the p-type InP, decreasing the Zn doping concentration of the InGaAs/InP boundary, and increasing the growth rate of p-InP. We derive the exact voltage-controlled PIN photodiode capacitance expressions as a function of the Zn diffusion depth in the InGaAs intrinsic layer. This work reveals that the RC bandwidth of p-doping diffusion photodiode capacitance can be controlled by reverse voltage. And it gives a novel reference to design photodiode and varactor in optical microwave mixed circuits.

引用

页码：503 / 506

页数：4

共 50 条

[1] Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN Photodiode
Iwasaki, T
Iguchi, Y
Sekiguchi, T
[J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 517 - 520
[2] Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP
Braga, Osvaldo M.
Delfino, Cristian A.
Kawabata, Rudy M. S.
Pinto, Luciana D.
Vieira, Gustavo S.
Pires, Mauricio P.
Souza, Patricia L.
Marega, Euclydes
Carlin, John A.
Krishna, Sanjay
[J]. OPTO-ELECTRONICS REVIEW, 2023, 31
[3] InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
Muramoto, Y
Ishibashi, T
[J]. ELECTRONICS LETTERS, 2003, 39 (24) : 1749 - 1750
[4] Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)
Vanhollebeke, K
D'Hondt, M
Moerman, I
Van Daele, P
Demeester, P
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (08) : 951 - 959
[5] Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)
K. Vanhollebeke
M. D'Hondt
I. Moerman
P. Van Daele
P. Demeester
[J]. Journal of Electronic Materials, 2001, 30 : 951 - 959
[6] An experimental investigation of Zn diffusion into InP and InGaAs
He, SX
Zhao, YL
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (02) : 149 - 151
[7] EBIC OBSERVATION ON THE INP/INGAAS/INP HETEROSTRUCTURE PHOTODIODE
TAKANOHASHI, T
OSAKA, F
KOMIYA, S
YAMAZAKI, S
NAKAJIMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L269 - L272
[8] USING SELECTIVE Zn DIFFUSION TO ENHANCE THE PERFORMANCE OF THE PHOTODIODE IN InP/InGaAs PD/HBT INTEGRATION
Huang, Shou-Chien
Huang, Wei-Kuo
Hsin, Yue-Ming
Shi, Jin-Wei
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (09) : 2200 - 2202
[9] InGaAs/InP SAGCM avalanche photodiode with a heterojunction multiplication layer
Zhao, Yangyang
Chen, Jun
[J]. Physica B: Condensed Matter, 2022, 629
[10] InGaAs/InP SAGCM avalanche photodiode with a heterojunction multiplication layer
Zhao, Yangyang
Chen, Jun
[J]. PHYSICA B-CONDENSED MATTER, 2022, 629

← 1 2 3 4 5 →