Facile nitrogen and sulfur deficient engineering on sulfur doped g-C3N4 for efficiently photocatalytic H2 evolution

被引:23
|
作者
Li, Jinqiao [1 ]
Liu, Xiaoteng [1 ]
Liu, Chunbo [2 ]
Che, Huinan [1 ]
Li, Chunxiang [1 ]
机构
[1] Jiangsu Univ, Inst Green Chem & Chem Technol, Sch Chem & Chem Engn, Zhenjiang 212013, Peoples R China
[2] Jilin Normal Univ, Key Lab Preparat & Applicat Environm Friendly Mat, Minist Educ, Changchun 130103, Peoples R China
基金
中国国家自然科学基金;
关键词
One-step method; Graphitic carbon nitride; Sulfur-doped; Nitrogen defects; Sulfur defects; Photocatalytic hydrogen evolution;
D O I
10.1016/j.jtice.2020.12.001
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Graphitic carbon nitride (g-C3N4) gets lots of attention as a promising candidate in solar energy conversion. However, the single modification method has limited effectiveness to access highly photocatalytic performance g-C3N4 catalyst. In this work, we present a facile method that can construct nitrogen and sulfur defects in the synthesis process of sulfur-doped g-C3N4. As results, nitrogen and sulfur deficient sulfur-doped g-C3N4 catalyst (SCND-x) integrate the advantages of these two modification methods. SCND-x exhibit a wide light absorption range and an efficient photocarriers separation ability. The optimal sample SCND-3 shows an excellent photocatalytic property with a hydrogen evolution rate of 70.2 mmol h(-1) under visible light excitation (lambda > 420 nm), which is about 23.4 times better than pristine g-C3N4 (MCN). And the apparent quantum efficiency of SCND-3 is up to 3.3% at 420 nm. In a word, we successfully practice a facile method to prepare high photocatalytic activity catalyst by introducing nitrogen and sulfur defects in sulfur-doped g-C3N4. (c) 2020 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:93 / 102
页数:10
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