Low-Temperature Thermopower in CoSbS

被引:17
|
作者
Du, Qianheng [1 ,2 ]
Abeykoon, Milinda [3 ]
Liu, Yu [1 ]
Kotliar, G. [1 ,4 ]
Petrovic, C. [1 ,2 ]
机构
[1] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[2] SUNY Stony Brook, Dept Mat Sci & Chem Engn, Stony Brook, NY 11790 USA
[3] Brookhaven Natl Lab, Natl Synchrotron Light Source 2, Photon Sci Div, Upton, NY 11973 USA
[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08856 USA
关键词
TRANSPORT; PERFORMANCE;
D O I
10.1103/PhysRevLett.123.076602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on giant thermopower of S = 2.5 mV/K in CoSbS single crystals: a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low-temperature thermopower induced by a magnetic field point to the mechanism of electronic diffusion of carriers in the heavy valence band. Intrinsic magnetic susceptibility is consistent with the Kondo-insulatorlike accumulation of electronic states around the gap edges. This suggests that giant thermopower stems from temperature-dependent renormalization of the noninteracting bands and buildup of the electronic correlations on cooling.
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页数:6
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