Epitaxial growth of GaNAs/GaAs heterostructure materials

被引：1
|
作者：
Lin, YW [1 ]
Pan, Z [1 ]
Li, LH [1 ]
Zhou, ZQ [1 ]
Wang, H [1 ]
Zhang, W [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
THIN SOLID FILMS | 2000年 / 368卷 / 02期
基金：
中国国家自然科学基金;
关键词：
GaNAs; DC active N-2 plasma; molecular beam epitaxy; nitrogen content; Fourier transform infrared spectroscopy of intensity;
D O I：
10.1016/S0040-6090(00)00775-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码：249 / 252
页数：4
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