Emergent flat band electronic structure in a VSe2/Bi2Se3 heterostructure

被引:19
|
作者
Yilmaz, Turgut [1 ]
Tong, Xiao [2 ]
Dai, Zhongwei [2 ]
Sadowski, Jerzy T. [2 ]
Schwier, Eike F. [3 ]
Shimada, Kenya [3 ]
Hwang, Sooyeon [2 ]
Kisslinger, Kim [2 ]
Kaznatcheev, Konstantine [1 ]
Vescovo, Elio [1 ]
Sinkovic, Boris [4 ]
机构
[1] Natl Synchrotron Light Source II, Brookhaven Natl Lab, Upton, NY 11973 USA
[2] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[3] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, 2-313 Kagamiyama, Higashihiroshima 7390046, Japan
[4] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
关键词
SUPERCONDUCTIVITY; GRAPHENE;
D O I
10.1038/s43246-020-00115-w
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Flat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials. Dispersionless flat bands are often required to observe unusual quantum states of matter. Here, angle-resolved photoemission spectroscopy (ARPES) reveals a flat band electronic structure in a VSe2/Bi2Se3 heterostructure, and exhibits complex circular dichroism.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Emergent flat band electronic structure in a VSe2/Bi2Se3 heterostructure
    Turgut Yilmaz
    Xiao Tong
    Zhongwei Dai
    Jerzy T. Sadowski
    Eike F. Schwier
    Kenya Shimada
    Sooyeon Hwang
    Kim Kisslinger
    Konstantine Kaznatcheev
    Elio Vescovo
    Boris Sinkovic
    Communications Materials, 2
  • [2] Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure
    Wang, Xin
    Wang, Donghui
    Zou, Yuxiao
    Wang, Tao
    Li, Yunliang
    Niu, Xiaobin
    Song, Guofeng
    Wang, Bin
    Liu, Ying
    ACS NANO, 2024, 18 (36) : 24812 - 24818
  • [3] The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure
    Liu, X.
    Du, X.
    Huang, G. Q.
    SOLID STATE COMMUNICATIONS, 2016, 248 : 43 - 46
  • [4] Emergence of topological and trivial interface states in VSe2 films coupled to Bi2Se3
    Hlevyack, Joseph A.
    Chan, Yang-Hao
    Lin, Meng-Kai
    He, Tao
    Peng, Wei-Hsiang
    Royal, Ellen C.
    Chou, Mei-Yin
    Chiang, T. -C.
    PHYSICAL REVIEW B, 2022, 105 (19)
  • [5] Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2
    Tae Gwan Park
    Jae Ho Jeon
    Seung-Hyun Chun
    Sunghun Lee
    Fabian Rotermund
    Communications Physics, 5
  • [6] Ultrafast interfacial carrier dynamics and persistent topological surface states of Bi2Se3 in heterojunctions with VSe2
    Park, Tae Gwan
    Jeon, Jae Ho
    Chun, Seung-Hyun
    Lee, Sunghun
    Rotermund, Fabian
    COMMUNICATIONS PHYSICS, 2022, 5 (01)
  • [7] An ab initio study of the electronic properties of the ferroelectric heterostructure In2Se3/Bi2Se3
    Ayadi, T.
    Debbichi, L.
    Badawi, M.
    Said, M.
    Rocca, D.
    Lebegue, S.
    APPLIED SURFACE SCIENCE, 2021, 538
  • [8] Complex band structure of topological insulator Bi2Se3
    Betancourt, J.
    Li, S.
    Dang, X.
    Burton, J. D.
    Tsymbal, E. Y.
    Velev, J. P.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (39)
  • [9] Electronic Structure of Ultrathin Cs/Bi2Se3 Interfaces
    Benemanskaya, G. V.
    Timoshnev, S. N.
    TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 4) : S303 - S306
  • [10] Electronic Structure of Ultrathin Cs/Bi2Se3 Interfaces
    G. V. Benemanskaya
    S. N. Timoshnev
    Technical Physics Letters, 2023, 49 : S303 - S306