Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors

被引：8
|
作者：
Jin, Kui-juan
Xu, S. J.
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, HKU CAS, Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 03期
关键词：
D O I：
10.1063/1.2432286
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An unusual response in the luminescence measurements of GaN thin film and ZnO bulk crystal is observed at low temperatures. The authors demonstrate theoretically that such an unusual response is due to the longitudinal optical phonon mediated Fano resonance involved in the recombination process of the donor bound exciton. The line shapes obtained by the calculation in the present mechanism are in excellent agreement with the experimental results. (c) 2007 American Institute of Physics.
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