Ultra High Density SoIC with Sub-micron Bond Pitch

被引:35
|
作者
Chen, Y. H. [1 ]
Yang, C. A. [1 ]
Kuo, C. C. [1 ]
Chen, M. F. [1 ]
Tung, C. H. [1 ]
Chiou, W. C. [1 ]
Yu, Douglas [1 ]
机构
[1] Taiwan Semicond Mfg Co Ltd, Integrated Interconnect & Packaging, R&D, 166,Pk Ave 2,Hsinchu Sci Pk, Hsinchu 30075, Taiwan
关键词
3DIC; SoIC; WLSI; ultra high bond density; sub-micron bond pitch; chiplets integration; system scaling; system deep partition;
D O I
10.1109/ECTC32862.2020.00096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density >= 1.2 million bonds/mm(2) is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Micro-system scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.
引用
收藏
页码:576 / 581
页数:6
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