Negative differential resistance and switching behavior in single wall bamboo-shape carbon nanotubes based molecular device: A first-principles study nanoscale device design

被引:6
|
作者
Kumar, Maneesh [1 ]
机构
[1] Jamia Millia Islamia, Fac Engn & Technol, Dept Appl Sci & Humanities, Phys Sect, New Delhi 110025, India
关键词
Single wall bamboo-shape carbon nanotubes; I-V characteristics; Transmission pathways; NDR effect; Molecular devices; Electronic transport; ROOM-TEMPERATURE; DOPED CARBON; ELECTRONIC-PROPERTIES; SPIN-FILTER; TRANSPORT; JUNCTIONS; CONDUCTANCE; GROWTH; DEPOSITION; PYROLYSIS;
D O I
10.1016/j.materresbull.2017.03.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By using the first-principles density functional theory and a nonequilibrium Green's function, the quantum electronic transport properties of single wall bamboo-shape carbon nanotubes created by partitioning in C(12,0) zigzag single wall carbon nanotubes based molecular devices are investigated. In the present work, we designed and simulated C(12,0) bamboo-shape single wall carbon nanotubes (BS-SWCNTs) by connecting the coronene (C24H12) molecule as interface of two pure zigzag C(12,0) nanotubes by chemical bonds and interface regions, thus obtained six pentagons and six hexagons on both sides of the tube. We observed that this BS-SWCNTs device exhibits the negative differential resistance (NDR) with certain bias voltage 1.1 V. The current voltage characteristics of the BS-SWCNTs show a switching behavior at bias region 1.1-1.6 V and very high peak-to-valley current ratio of the order of 10(6). A detailed analysis of the origin of NDR was carried out with transmission pathways, MPSH with various external bias voltages. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:148 / 154
页数:7
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