Characteristics of high in-content InGaN alloys grown by MOCVD

被引：0

作者：

Zhu Xue-Liang ^{[1
]}

Guo Li-Wei ^{[1
]}

Yu Nai-Sen ^{[1
]}

Peng Ming-Zeng ^{[1
]}

Yan Jian-Feng ^{[1
]}

Ge Bing-Hui ^{[1
]}

Jia Hai-Qiang ^{[1
]}

Chen Hong ^{[1
]}

Zhou Jun-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InN and In0.46Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveals that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm(2)V(-1)s(-1) and that of In0.46Ga0.54N is 163 cm(2)V(-1)s(-1). Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum cells.

引用

页码：3369 / 3372

页数：4

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