MODELLING OF CHARGE QUBITS BASED ON SI/SIO2 DOUBLE QUANTUM DOTS

被引：0

作者：

Howard, P. ^{[1
]}

Andreev, A. D. ^{[1
,2
]}

Williams, D. A. ^{[2
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Hitachi Europe Ltd, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY | 2009年

关键词：

charge qubit; silicon; double quantum dot;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

The finite difference method and anisotropic effective mass density functional theory (DFT) are used to study the dependence of the electronic structure, wavefunctions and charge density on the width of the Silicon neck between the dots in an Si/SiO2 isolated double quatum dot (IDQD) structure. An optimised algorithm for determining the self-consistent DFT potential was used. We demonstrate that the behaviour changes from strong to weak coupling between 2nm and 5nm width of the neck connecting the 30nm diameter dots.

引用

页码：243 / +

页数：2

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